Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
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چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2019
ISSN: 0021-4922,1347-4065
DOI: 10.7567/1347-4065/ab4754